方晓生、胡林峰课题组新发一篇Nano Lett. (IF13.025)
发布时间:2015-05-11        浏览次数:53

Heteroepitaxial Growth of GaP/ZnS Nanocable with Superior Optoelectronic Response


Author(s): Hu, LF (Hu, Linfeng)[ 1 ] ; Brewster, MM (Brewster, Megan M.)[ 3 ] ; Xu, XJ (Xu, Xiaojie)[ 1 ] ; 
Tang, CC (Tang, Chengchun)[ 2 ] ; Gradecak, S (Gradecak, Silvija)[ 3 ] ; Fang, XS (Fang, Xiaosheng)[ 1 ]

Source: NANO LETTERS  Volume: 13   Issue: 5   Pages: 1941-1947   DOI: 10.1021/nl3046552   Published: MAY 2013
Times Cited: 0 (from Web of Science)

Cited References: 28      [ view related records ]     Citation Map
Abstract: We demonstrate the controlled growth of coaxial nanocables composed of GaP/ZnS core shell
structures by a facile chemical vapor deposition method. Structural analysis confirms that the cubic GaP
(111) plane and wurtzite ZnS (0001) plane present close similarities in terms of hexagonal-arranged
atomic configuration with small in-plane lattice mismatch, and the ZnS shell is epitaxially grown on the
(100) plane of the cubic GaP core. Compared with the unitary ZnS nanobelts, the GaP/ZnS coaxial
nanocables exhibit improved optoelectronic properties such as high photocurrent and excellent
photocurrent stability. This approach opens up new strategy to boost the performance of ZnS-based

photodetectors.

Accession Number: WOS:000318892400012

Document Type: Article

Language: English

Author Keywords: GaP/ZnS; nanocable; heteroepitaxial growth; optoelectronic response

KeyWords Plus: ULTRAVIOLET-LIGHT SENSORS; SOLAR-CELLS; ZNS NANOBELTS;

PHOTODETECTOR; NANOWIRES

Reprint Address: Fang, XS (reprint author)

Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China.

Addresses:

[ 1 ] Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China

[ 2 ] Hebei Univ Technol, Sch Mat Sci & Engn, Tianjin 300130, Peoples R China

[ 3 ] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

E-mail Addresses: xshfang@fudan.edu.cn