材料物理教研室
高尚鹏
教授
Email:gaosp@fudan.edu.cn
办公地点:江湾校区先进材料楼435
1995-1999 清华大学物理系本科
1999-2004 清华大学材料系研究生
2004-2005 美国匹兹堡大学材料系博士后
2005-2007 英国剑桥大学卡文迪许实验室博士后
2008-2014 复旦大学材料科学系副研究员
2014年2月-至今 复旦大学材料科学系博士生导师
2014年12月-至今 复旦大学材料科学系教授
访问经历
2000. 11 – 2001. 2 法国国家研究中心固体物理实验室(CNRS-LPS) 访问研究生
2008. 1 – 2008. 2 英国剑桥大学、约克大学 应邀学术访问
半导体材料和器件、功率半导体
材料结构和性质计算模拟
集成电路用硅材料基础性能
材料电子结构和光学、输运性质
激发态电子结构和电子能量损失谱
欢迎感兴趣的学生联系交流开展本科生科创项目、攻读研究生事宜,欢迎相关领域的博士联系开展博士后合作研究。
1.《半导体材料》
2.《计算材料学》
3. 《材料分析》
4. 《材料计算与设计》(研究生课程)
2012届复旦大学本(专)科毕业生“我心目中的好老师”提名奖
Royal Society Sino-British Fellowship Trust Awards (2005)
Z. R. He, A. A. Sun, S. P. Gao*. Electron-phonon scattering and stacking sequences in hexagonal boron nitride: An ab initio study. Physical Review B 108: 165108 (2023)
M. Q. Xu, A. W. Li, S. J. Pennycook, S. P. Gao*, W. Zhou*. Probing a defect-site-specific electronic orbital in graphene with single-atom sensitivity. Physical Review Letters 131: 186202 (2023)
G. Yang, J. C. Fan, S. P. Gao*. Momentum and thickness dependent excitonic and plasmonic properties of 2D h-BN and MoS2 restored from supercell calculations. Nanoscale Advances 5: 6990–6998 (2023)
A. A. Sun, S. P. Gao*. Depolarization of few-layer III–V and II–VI materials through symmetric rumpling. Physical Chemistry Chemical Physics 24: 12621-12630 (2022)
W. J. Wang, S. P. Gao*. Electronic and catalytic properties of carbon nitride derivatives tuned by building blocks and linkages. International Journal of Hydrogen Energy 47: 8761-8775 (2022)
T. Wang, G. X. Ren, H. Y. Xia, Z. Shadike, T. Q. Huang, X. L. Li, S. Y. Yang, M. W. Chen, P. Liu, S. P. Gao*, X. S. Liu*, Z. W. Fu*. Anionic redox regulated via metal-ligand combinations in layered sulfides. Advanced Materials 34(4): 2107353 (2021)
G. Yang, S. P. Gao*. A method to restore the intrinsic dielectric functions of 2D materials in periodic calculations. Nanoscale 13: 17057 (2021)
G. Yang, W. X. Xu, S. P. Gao*. Electronic and optical properties of ultrathin cerium dioxide: A many-body GW-BSE investigation. Computational Materials Science 198: 110696 (2021)
J. H. Weng, S. P. Gao*. Layer-dependent band gaps and dielectric constants of ultrathin fluorite crystals. Journal of Physics and Chemistry of Solids 148: 109738 (2021)
A. A. Sun, S. P. Gao*, G. Gu*. Peculiar bond characters of fivefold coordinated octet compound crystals. Chemical Science 11(17): 4340-4350 (2020). (Pick of the Week)
H. M. Tang†, A. A. Sun†, S. P. Gao*, Stability, electronic structures, and band alignment of two-dimensional IIA-IV-N2 materials. Physical Review Materials 4: 084004 (2020)
L. F. Wang*, L. Liu, J. Chen, A. Mohsin, J. H. Yum, T. W. Hudnall, C. W. Bielawski, T. Rajh, X. D. Bai, S. P. Gao*, G. Gu*. Synthesis of honeycomb-structured beryllium oxide via graphene liquid cells. Angewandte Chemie International Edition 59(36): 15734–15740 (2020).
Y. J. Zhang, H. M. Tang, S. P. Gao*. Density functional theory study of ZnIn2S4 and CdIn2S4 polymorphs using full-potential linearized augmented plane wave method and modified Becke-Johnson potential, Physica Status Solidi B-Basic Solid State Physics, 257(1): 1900485 (2020).
A. A. Sun, S. P. Gao*, G. Gu*. Stability and electronic properties of GaN phases with inversion symmetry to inherently inhibit polarization. Physical Review Materials 3(10): 104604 (2019).
J. H. Weng, S. P. Gao. Structures and characteristics of atomically thin ZrO2 from monolayer to bilayer and two-dimensional ZrO2-MoS2 heterojunction. RSC Advances, 9(57): 32984-32994 (2019).
H. M. Tang, S. P. Gao*. First-principles study of structural, vibrational, and electronic properties of trigonally bonded II-IV-N2. Computational Materials Science, 158: 88-97 (2019)
J. H. Weng, S. P. Gao*. A honeycomb-like monolayer of HfO2 and the calculation of static dielectric constant eliminating the effect of vacuum spacing. Physical Chemistry Chemical Physics, 20: 26453-26462 (2018)
Y. S. Si, T. Q. Huang, Q. J. Li, Y. T. Huang, S. P. Gao*, M. Chen*, L. M. Wu*. Hierarchical macro–mesoporous polymeric carbon nitride microspheres with narrow bandgap for enhanced photocatalytic hydrogen production. Advanced Materials Interfaces 2018: 1801241 (2018).
K. L. Wang, S. P. Gao*. Phonon dispersions, band structures, and dielectric functions of BeO and BeS polymorphs. Journal of Physics and Chemistry of Solids 118: 242-247 (2018)
J. F. Shen, H. Wang, P. Y. Zhuang, H. T. Zeng, Y. C. Ge, C. Steven, P. Dong, S. P. Gao*, M. X. Ye*. A general strategy for the functionalization of two-dimensional metal chalcogenides. Nanoscale 10(22): 10657-10663 (2018)