高尚鹏

教授   

Email:gaosp@fudan.edu.cn   

办公地点:江湾校区先进材料楼435   


教育和工作经历

  • 1995-1999 清华大学物理系本科

  • 1999-2004 清华大学材料系研究生

  • 2004-2005 美国匹兹堡大学材料系博士后

  • 2005-2007 英国剑桥大学卡文迪许实验室博士后

  • 2008-2014 复旦大学材料科学系副研究员

  • 2014年2月-至今 复旦大学材料科学系博士生导师

  • 2014年12月-至今 复旦大学材料科学系教授

  • 访问经历

  • 2000. 11 – 2001. 2 法国国家研究中心固体物理实验室(CNRS-LPS) 访问研究生

  • 2008. 1 – 2008. 2 英国剑桥大学、约克大学 应邀学术访问

研究方向

  • 材料结构和性质第一原理计算

  • 电子能量损失谱和介电函数

  • 激发态电子结构

  • 半导体材料和介电材料

主讲课程

1.《半导体材料》

2.《计算材料学》

3. 《材料分析》

4. 《材料计算与设计》(研究生课程)

主要荣誉和奖励

2012届复旦大学本(专)科毕业生“我心目中的好老师”提名奖

Royal Society Sino-British Fellowship Trust Awards (2005)

代表性论文

  1. A. A. Sun, S. P. Gao*. Depolarization of few-layer III–V and II–VI materials through symmetric rumpling. Physical Chemistry Chemical Physics 24: 12621-12630 (2022)

  2. W. J. Wang, S. P. Gao*. Electronic and catalytic properties of carbon nitride derivatives tuned by building blocks and linkages. International Journal of Hydrogen Energy 47: 8761-8775 (2022)

  3. T. Wang, G. X. Ren, H. Y. Xia, Z. Shadike, T. Q. Huang, X. L. Li, S. Y. Yang, M. W. Chen, P. Liu, S. P. Gao*, X. S. Liu*, Z. W. Fu*. Anionic redox regulated via metal-ligand combinations in layered sulfides. Advanced Materials 34(4): 2107353 (2021)

  4. G. Yang, S. P. Gao*. A method to restore the intrinsic dielectric functions of 2D materials in periodic calculations. Nanoscale 13: 17057 (2021)

  5. G. Yang, W. X. Xu, S. P. Gao*. Electronic and optical properties of ultrathin cerium dioxide: A many-body GW-BSE investigation. Computational Materials Science 198: 110696 (2021)

  6. J. H. Weng, S. P. Gao*. Layer-dependent band gaps and dielectric constants of ultrathin fluorite crystals. Journal of Physics and Chemistry of Solids 148: 109738 (2021)

  7. A. A. Sun, S. P. Gao*, G. Gu*. Peculiar bond characters of fivefold coordinated octet compound crystals. Chemical Science 11(17): 4340-4350 (2020). (Pick of the Week)

  8. H. M. Tang, A. A. Sun, S. P. Gao*, Stability, electronic structures, and band alignment of two-dimensional IIA-IV-N2 materials. Physical Review Materials 4: 084004 (2020)

  9. L. F. Wang*, L. Liu, J. Chen, A. Mohsin, J. H. Yum, T. W. Hudnall, C. W. Bielawski, T. Rajh, X. D. Bai, S. P. Gao*, G. Gu*. Synthesis of honeycomb-structured beryllium oxide via graphene liquid cells. Angewandte Chemie International Edition 59(36): 15734–15740 (2020).

  10. Y. J. Zhang, H. M. Tang, S. P. Gao*. Density functional theory study of ZnIn2S4 and CdIn2S4 polymorphs using full-potential linearized augmented plane wave method and modified Becke-Johnson potential, Physica Status Solidi B-Basic Solid State Physics, 257(1): 1900485 (2020).

  11. A. A. Sun, S. P. Gao*, G. Gu*. Stability and electronic properties of GaN phases with inversion symmetry to inherently inhibit polarization. Physical Review Materials 3(10): 104604 (2019).

  12. J. H. Weng, S. P. Gao. Structures and characteristics of atomically thin ZrO2 from monolayer to bilayer and two-dimensional ZrO2-MoS2 heterojunction. RSC Advances, 9(57): 32984-32994 (2019).

  13. H. M. Tang, S. P. Gao*. First-principles study of structural, vibrational, and electronic properties of trigonally bonded II-IV-N2. Computational Materials Science, 158: 88-97 (2019)

  14. J. H. Weng, S. P. Gao*. A honeycomb-like monolayer of HfO2 and the calculation of static dielectric constant eliminating the effect of vacuum spacing. Physical Chemistry Chemical Physics, 20: 26453-26462 (2018)

  15. Y. S. Si, T. Q. Huang, Q. J. Li, Y. T. Huang, S. P. Gao*, M. Chen*, L. M. Wu*. Hierarchical macro–mesoporous polymeric carbon nitride microspheres with narrow bandgap for enhanced photocatalytic hydrogen production. Advanced Materials Interfaces 2018: 1801241 (2018).

  16. K. L. Wang, S. P. Gao*. Phonon dispersions, band structures, and dielectric functions of BeO and BeS polymorphs. Journal of Physics and Chemistry of Solids 118: 242-247 (2018)

  17. J. F. Shen, H. Wang, P. Y. Zhuang, H. T. Zeng, Y. C. Ge, C. Steven, P. Dong, S. P. Gao*, M. X. Ye*. A general strategy for the functionalization of two-dimensional metal chalcogenides. Nanoscale 10(22): 10657-10663 (2018)